Abstract
We have synthesized and investigated the heterointerfaces of KTaO3 (KTO) and GdScO3 (GSO), which are both polar complex-oxides along the pseudo-cubic [001] direction. Since their layers have the same, conflicting net charges at interfaces, i.e., KO(−1)/ScO2(−1) or TaO2(+1)/GdO(+1), forming the heterointerface of KTO/GSO should be forbidden due to strong Coulomb repulsion, the so-called polarity conflict. However, we have discovered that atomic reconstruction occurs at the heterointerfaces between KTO thin-films and GSO substrates, which effectively alleviates the polarity conflict without destroying the hetero-epitaxy. Our result demonstrates one of the important ways to create artificial heterostructures from polar complex-oxides.
Document Type
Article
Publication Date
9-8-2014
Digital Object Identifier (DOI)
http://dx.doi.org/10.1063/1.4895392
Funding Information
This research was supported in part by the National Science Foundation through Grant No. EPS-0814194 (the Center for Advanced Materials) and by a grant from the Kentucky Science and Engineering Foundation as per Grant Agreement #KSEF-148-502-14-328 with the Kentucky Science and Technology Corporation. The work at UCSB was supported by the MRSEC Program of the National Science Foundation under Award No. DMR-1121053.
Repository Citation
Thompson, Justin K.; Hwang, J.; Nichols, John; Connell, John G.; Stemmer, S.; and Seo, Sung S. Ambrose, "Alleviating Polarity-Conflict at the Heterointerfaces of KTaO3/GdScO3 Polar Complex-Oxides" (2014). Physics and Astronomy Faculty Publications. 244.
https://uknowledge.uky.edu/physastron_facpub/244
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Notes/Citation Information
Published in Applied Physics Letters, v. 105, no. 10, article 102901, p. 1-4.
Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Applied Physics Letters, v. 105, n. 10, article 102901, p. 1-4 and may be found at http://dx.doi.org/10.1063/1.4895392.