The electrical properties of organic field-effect transistors are governed by the quality of the constituting layers, and the resulting interfaces. We compare the properties of the same organic semiconductor film, 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene, with bottom SiO2 dielectric and top Cytop dielectric and find a 10× increase in charge carrier mobility, from 0.17 ± 0.19 cm2 V−1 s−1 to 1.5 ± 0.70 cm2 V−1 s−1, when the polymer dielectric is used. This results from a significant reduction of the trap density of states in the semiconductor band-gap, and a decrease in the contact resistance.
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Work at WFU was supported by the National Science Foundation grants ECCS-1254757 and ECCS-1338012. Synthesis of organic semiconductors at the UK is supported by the National Science Foundation (CMMI-1255494).
Diemer, Peter J.; Lamport, Zachary A.; Mei, Yaochuan; Ward, Jeremy W.; Goetz, Katelyn P.; Li, Wei; Payne, Marcia M.; Guthold, Martin; Anthony, John E.; and Jurchescu, Oana D., "Quantitative Analysis of the Density of Trap States at the Semiconductor-Dielectric Interface in Organic Field-Effect Transistors" (2015). Chemistry Faculty Publications. 69.