Abstract
The electrical properties of organic field-effect transistors are governed by the quality of the constituting layers, and the resulting interfaces. We compare the properties of the same organic semiconductor film, 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene, with bottom SiO2 dielectric and top Cytop dielectric and find a 10× increase in charge carrier mobility, from 0.17 ± 0.19 cm2 V−1 s−1 to 1.5 ± 0.70 cm2 V−1 s−1, when the polymer dielectric is used. This results from a significant reduction of the trap density of states in the semiconductor band-gap, and a decrease in the contact resistance.
Document Type
Article
Publication Date
9-7-2015
Digital Object Identifier (DOI)
http://dx.doi.org/10.1063/1.4930310
Funding Information
Work at WFU was supported by the National Science Foundation grants ECCS-1254757 and ECCS-1338012. Synthesis of organic semiconductors at the UK is supported by the National Science Foundation (CMMI-1255494).
Repository Citation
Diemer, Peter J.; Lamport, Zachary A.; Mei, Yaochuan; Ward, Jeremy W.; Goetz, Katelyn P.; Li, Wei; Payne, Marcia M.; Guthold, Martin; Anthony, John E.; and Jurchescu, Oana D., "Quantitative Analysis of the Density of Trap States at the Semiconductor-Dielectric Interface in Organic Field-Effect Transistors" (2015). Chemistry Faculty Publications. 69.
https://uknowledge.uky.edu/chemistry_facpub/69
Notes/Citation Information
Published in Applied Physics Letters, v. 107, no. 10, article 103303, p. 1-5.
© 2015 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.
The following article appeared in Applied Physics Letters, v. 107, no. 10, article 103303, p. 1-5 and may be found at http://dx.doi.org/10.1063/1.4930310.