US Patent Number
A method including the steps of (a) depositing a metal layer on a selected portion of a silicon substrate under a first set of predetermined conditions to form an metal silicide layer and an intermediate n-type silicon layer; and (b) exposing the metal silicide layer and the n-type silicon layer to a second set of predetermined conditions to form a silicon clathrate film on the selected portion of the silicon substrate, where the intermediate n-type silicon layer acts to bond the silicon clathrate to the silicon substrate to form a silicon clathrate structure.
University of Kentucky Research Foundation Intellectual Property Development, Lexington, Ky.
Grigorian, Leonid; Eklund, Peter C.; and Fang, Shaoli, "Clathrate Structure for Electronic and Electro-Optic Applications" (2000). Physics and Astronomy Faculty Patents. 5.