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US Patent Number

8357309

Publication Date

1-22-2013

Abstract

Single crystal and polycrystal oxoruthenates having the generalized compositions (Baz,Sr1−z)FexCoyRu6−(x+y)O11 (1≦(x+y)≦5; 0≦z≦1) and (Ba,Sr)M2±xRu4∓xO11 (M=Fe,Co) belong to a novel class of ferromagnetic semiconductors with applications in spin-based field effect transistors, spin-based light emitting diodes, and magnetic random access memories.

Assignees

University of Kentucky Research Foundation, Lexington, KY (US)

Application Number

12/062,076

Filing Date

04/03/2008

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