Abstract
We have synthesized epitaxial Sr2IrO4 thin-films on various substrates and studied their electronic structure as a function of lattice-strain. Under tensile (compressive) strain, increased (decreased) Ir-O-Ir bond-angle is expected to result in increased (decreased) electronic bandwidth. However, we have observed that the two optical absorption peaks near 0.5 eV and 1.0 eV are shifted to higher (lower) energies under tensile (compressive) strain, indicating that the electronic-correlation energy is also affected by in-plane lattice-strain. The effective tuning of electronic structure under lattice-modification provides an important insight into the physics driven by the coexisting strong spin-orbit coupling and electronic correlation.
Document Type
Article
Publication Date
4-11-2013
Digital Object Identifier (DOI)
http://dx.doi.org/10.1063/1.4801877
Funding Information
This research was supported by the NSF through Grant No. EPS-0814194 (the Center for Advanced Materials), Grant Nos. DMR-0800367, DMR-0856234, by U.S. DoE through Grant No. DE-FG02-97ER45653, and by the Kentucky Science and Engineering Foundation with the Kentucky Science and Technology Corporation through Grant Agreement No. KSEF-148-502-12-303.
Repository Citation
Nichols, J.; Terzic, Jsaminka; Bittle, Emily Geraldine; Korneta, Oleksandr B.; De Long, Lance E.; Brill, Joseph; Cao, Gang; and Seo, Sung S. Ambrose, "Tuning Electronic Structure via Exipatial Strain in Sr2IrO4 Thin Films" (2013). Physics and Astronomy Faculty Publications. 240.
https://uknowledge.uky.edu/physastron_facpub/240
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Notes/Citation Information
Published in Applied Physics Letters, v. 102, article 141908, p. 1-4.
Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Applied Physics Letters, v. 102, article 141908, p. 1-4 and may be found at http://dx.doi.org/10.1063/1.4801877.