US Patent Number
10,868,534
Publication Date
12-15-2020
Abstract
An adiabatic logic-in-memory based complementary metal- oxide-semiconductor/magnetic-tunnel-junction (ALiM CMOS/MTJ) circuit utilizes an adiabatic logic based pre- charged sense amplifier (PCSA) to recover energy from its output load capacitors. The ALiM CMOS/MTJ includes a non-volatile magnetic-tunnel-junction (MTJ) based memory. The ALiM CMOS/MTJ also includes a dual rail complementary metal-oxide-semiconductor (CMOS) logic that performs logic operations in association with the MTJ, and thereby generates logic outputs based on logic inputs. The ALiM CMOS/MTJ also includes the adiabatic PCSA, which is operatively coupled to the dual rail CMOS logic. The adiabatic logic based PCSA includes PCSA circuitry for which an input is a multi-phase power clock, and a charge recovery circuit having the output load capacitors. The charge recovery circuit is operatively coupled to the PCSA circuitry such that the ALiM CMOS/MTJ circuit uses the power clock to recover energy from the output load capacitors.
Assignees
University of Kentucky Research Foundation, Lexington, KY (US)
Application Number
16/034,255
Filing Date
6-12-2018
Recommended Citation
Thapliyal, Himanshu and Kumar, S. Dinesh, "Adiabatic Logic-in-Memory Architecture" (2020). Electrical and Computer Engineering Faculty Patents. 21.
https://uknowledge.uky.edu/ece_patents/21
