Archived
This content is available here strictly for research, reference, and/or recordkeeping and as such it may not be fully accessible. If you work or study at University of Kentucky and would like to request an accessible version, please use the SensusAccess Document Converter.
US Patent Number
9,647,094
Publication Date
5-9-2017
Abstract
A method of manufacturing a semiconductor structure includes the steps of depositing a layer of semiconductor oxide on a base semiconductor layer, scavenging oxygen from the layer of semiconductor oxide and recrystallizing the oxygen scavenged layer of semiconductor oxide as a semiconductor heteroepitaxy layer.
Assignees
University of Kentucky Research Foundation, Lexington, KY (US)
Application Number
13/957,480
Filing Date
8-2-2013
Recommended Citation
Chen, Zhi David, "Method of Manufacturing a Semiconductor Heteroepitaxy Structure" (2017). Electrical and Computer Engineering Faculty Patents. 20.
https://uknowledge.uky.edu/ece_patents/20
