US Patent Number
9,647,094
Publication Date
5-9-2017
Abstract
A method of manufacturing a semiconductor structure includes the steps of depositing a layer of semiconductor oxide on a base semiconductor layer, scavenging oxygen from the layer of semiconductor oxide and recrystallizing the oxygen scavenged layer of semiconductor oxide as a semiconductor heteroepitaxy layer.
Assignees
University of Kentucky Research Foundation, Lexington, KY (US)
Application Number
13/957,480
Filing Date
8-2-2013
Recommended Citation
Chen, Zhi David, "Method of Manufacturing a Semiconductor Heteroepitaxy Structure" (2017). Electrical and Computer Engineering Faculty Patents. 20.
https://uknowledge.uky.edu/ece_patents/20
