Abstract
Due to the localized surface plasmon (LSP) effect induced by Ag nanoparticles inside black silicon, the optical absorption of black silicon is enhanced dramatically in near-infrared range (1,100 to 2,500 nm). The black silicon with Ag nanoparticles shows much higher absorption than black silicon fabricated by chemical etching or reactive ion etching over ultraviolet to near-infrared (UV-VIS-NIR, 250 to 2,500 nm). The maximum absorption even increased up to 93.6% in the NIR range (820 to 2,500 nm). The high absorption in NIR range makes LSP-enhanced black silicon a potential material used for NIR-sensitive optoelectronic device.
PACS
78.67.Bf; 78.30.Fs; 78.40.-q; 42.70.Gi
Document Type
Article
Publication Date
9-22-2014
Digital Object Identifier (DOI)
http://dx.doi.org/10.1186/1556-276X-9-519
Repository Citation
Zhang, Peng; Li, Shibin; Liu, Chunhua; Wei, Xiongbang; Wu, Zhiming; Jiang, Yadong; and Chen, Zhi, "Near-Infrared Optical Absorption Enhanced in Black Silicon via Ag Nanoparticle-Induced Localized Surface Plasmon" (2014). Electrical and Computer Engineering Faculty Publications. 5.
https://uknowledge.uky.edu/ece_facpub/5
Notes/Citation Information
Published in Nanoscale Research Letters, v. 9, article 519, p. 1-5.
© 2014 Zhang et al.; licensee Springer.
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.