Impurity-mediated near-infrared (NIR) photoresponse in silicon is of great interest for photovoltaics and photodetectors. In this paper, we have fabricated a series of n+/p photodetectors with hyperdoped silicon prepared by ion-implantation and femtosecond pulsed laser. These devices showed a remarkable enhancement on absorption and photoresponse at NIR wavelengths. The device fabricated with implantation dose of 1014 ions/cm2 has exhibited the best performance. The proposed method offers an approach to fabricate low-cost broadband silicon-based photodetectors.

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Published in Nanoscale Research Letters, v. 12, issue 1, 522, p. 1-4.

© The Author(s). 2017

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This work was supported by the National Natural Science Foundation of China under grant nos. 61421002, 61574029, and 61371046. This work was also partially supported by the University of Kentucky.