Date Available
4-20-2018
Year of Publication
2018
Document Type
Master's Thesis
Degree Name
Master of Science in Electrical Engineering (MSEE)
College
Engineering
Department/School/Program
Electrical and Computer Engineering
Advisor
Dr. J. Todd Hastings
Abstract
Electron Beam Induced Deposition (EBID) is a direct write fabrication process with applications in circuit edit and debug, mask repair, and rapid prototyping. However, it suffers from significant drawbacks, most notably low purity. Work over the last several years has demonstrated that deposition from bulk liquid precursors, rather than organometallic gaseous precursors, results in high purity deposits of low resistivity (LPEBID). In this work, it is shown that the deposits resulting from LP-EBID are only highly conductive when deposited at line doses below 25μC/cm. When the dose exceeds this value, the resulting structure is highly porous providing a poor conductive pathway. It is also shown that beam current has no significant effect on the resistivity of the deposits. Nanowires with resistivity significantly lower than the previous best result of 67μΩ•cm were achieved, with the lowest resistivity being only 6.6μΩ•cm, only a factor of 4 higher than that bulk copper of 1.7μΩ•cm.
Digital Object Identifier (DOI)
https://doi.org/10.13023/ETD.2018.120
Recommended Citation
Smith, Gabriel, "PARAMETERS AFFECTING THE RESISTIVITY OF LP-EBID DEPOSITED COPPER NANOWIRES" (2018). Theses and Dissertations--Electrical and Computer Engineering. 114.
https://uknowledge.uky.edu/ece_etds/114
Included in
Electronic Devices and Semiconductor Manufacturing Commons, Nanotechnology Fabrication Commons, VLSI and Circuits, Embedded and Hardware Systems Commons
