Date Available


Year of Publication


Degree Name

Doctor of Philosophy (PhD)

Document Type

Doctoral Dissertation


Arts and Sciences


Physics and Astronomy

First Advisor

Dr. Joseph W. Brill


The charge-density-wave (CDW) material orthorhombic tantalum trisulfide (TaS3) is a quasi-one dimensional material that forms long ribbon shaped crystals, and exhibits unique physical behavior. We have measured the dependence of the hysteretic voltage-induced torsional strain (VITS) in TaS3, which was first discovered by Pokrovskii et. al. in 2007, on temperature and applied torque. Our experimental results shows that the application of torque to the crystal could also change the VITS time constant, magnitude, and sign. This suggests that the VITS is a consequence of residual torsional strain originally present in the sample which twists the polarizations of the CDW when voltage is applied. This polarization twist then results in torque on the crystal.

Another group of materials that may attract interest is that of small-molecule soluble organic semiconductors. Due to their assumed small phonon thermal conductivities and higher charge carrier mobilities, which will increase their seebeck coefficients with doping as compared to polymers, the small-molecule organic materials are promising for thermoelectric applications. In our experiments, we have measured the interlayer thermal conductivity of rubrene (C42H28), using ac-calorimetry. For rubrene, we find that the interlayer thermal conductivity, ≈ 0.7 mW/cm·K, is several times smaller than the (previously measured) in-plane value. Also, we have measured the interlayer and in-plane thermal conductivities of 6,13-bis((triisopropylsilyl)ethynyl) pentacene (TIPS-Pn). The in-plane value is comparable to that of organic metals with excellent π-orbital overlap. The interlayer (c-axis) thermal diffusivity is at least an order of magnitude larger than the in-plane, and this unusual anisotropy implies very strong dispersion of optical modes in the interlayer direction, presumably due to interactions between the silyl-containing side groups. Similar values for both in-plane and interlayer conductivities have been observed for several other functionalized pentacene semiconductors with related structures.