Year of Publication

2010

Degree Name

Master of Science in Electrical Engineering (MSEE)

Document Type

Thesis

College

Engineering

Department

Electrical Engineering

First Advisor

Dr. Zhi Chen

Abstract

With the MOSFET scaling practice, the performance of IC devices is improved tremendously as we experienced in the last decades. However, the small semiconductor devices also bring some drawbacks among which the high gate leakage current is becoming increasingly serious.

This thesis work is focused on the of gate leakage current reduction in thin oxide semiconductor devices. The method being studied is the Phonon Energy Coupling Enhancement (PECE) effect induced by Rapid Thermal Processing (RTP). The basic MOS capacitors are used to check improvements of leakage current reduction after appropriate RTP process.

Through sets of experiments, it is found that after RTP in Helium environment could bring about four orders reduction in gate leakage current of MOS capacitors.

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