Abstract
The use of organic semiconductors in high-performance organic field-effect transistors requires a thorough understanding of the effects that processing conditions, thermal, and bias-stress history have on device operation. Here, we evaluate the temperature dependence of the electrical properties of transistors fabricated with 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene, a material that has attracted much attention recently due to its exceptional electrical properties. We have discovered a phase transition at T = 205 K and discuss its implications on device performance and stability. We examined the impact of this low-temperature phase transition on the thermodynamic, electrical, and structural properties of both single crystals and thin films of this material. Our results show that while the changes to the crystal structure are reversible, the induced thermal stress yields irreversible degradation of the devices.
Document Type
Article
Publication Date
8-28-2014
Digital Object Identifier (DOI)
http://dx.doi.org/10.1063/1.4894238
Funding Information
The work at WFU was supported by the NSF Grant Nos. ECCS-1254757 and DMR-1040264. J.W.W. and K.P.G. are supported by the NSF Graduate Research Fellowship Program under Grant No. DGE-0907738. J.E.A. and M.M.P. thank the National Science Foundation (CMMI-1255494) for their support of the synthesis of organic semiconductors.
Repository Citation
Ward, J. W.; Goetz, K. P.; Obaid, A.; Payne, Marcia M.; Diemer, P. J.; Day, C. S.; Anthony, John E.; and Jurchescu, O. D., "Low-Temperature Phase Transitions in a Soluble Oligoacene and Their Effect on Device Performance and Stability" (2014). Chemistry Faculty Publications. 34.
https://uknowledge.uky.edu/chemistry_facpub/34
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Notes/Citation Information
Published in Applied Physics Letters, v. 105, no. 8, article 083305, p. 1-5.
Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Applied Physics Letters, v. 105, no. 8, article 083305, p. 1-5 and may be found at http://dx.doi.org/10.1063/1.4894238.