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Abstract

Strained semiconductor quantum wells have been an active area of research for more than three decades. However, a major part of the reported literature has shown a core focus on the theoretical and experimental investigations of their energy band structures under different internal and external perturbations, taking strain parameters as the basis and studying their resulting effects on various optoelectrical properties of the strained quantum wells. However, since stress parameters can be measured more easily and with an enhanced level of accuracy compared to strain parameters, developing a stress-based analytical framework offers distinct advantages. This study focuses on the theoretical formulation of the bandgap evolution under different stress perturbations, namely, uniaxial, biaxial, and torsional stresses. Among these, biaxial and torsion stress perturbations have been incorporated for the first time in a unique manner for analyzing the bandgap of stressed quantum wells. Further, various constraints including zone center conditions, 1D quantum well potential, and anisotropic cubic symmetry have been incorporated during the formulation of stressed semiconductor quantum wells to reduce the complexity of formulation and, hence, providing a baseline study for future research of multi-dimensional potentials and complex internal or external perturbations.

Document Type

Article

Publication Date

2-21-2026

Notes/Citation Information

Publisher Copyright: © 2026 Author(s).

Digital Object Identifier (DOI)

10.1063/5.0313904

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