US Patent Number
The present invention relates to the presence of nanogaps across a metal dispersed over an atomically-thin material, such that the nanogap exposes the atomically-thin material. The resulting device offers an ultra-short gap with ballistic transport and demonstrated switching in the presence of a gate or dielectric material in close proximity to the channel.
University of Kentucky Research Foundation, Lexington, KY (US)
Strachan, Douglas Robert; Sundararajan, Abhishek; and Boland, Mathias Joseph, "Nanogaps on Atomically Thin Materials as Non-Volatile Read/Writable Memory Devices" (2019). Physics and Astronomy Faculty Patents. 16.