US Patent Number
The composition of matter comprising Ga(Sbx)N1−x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.
The University of Kentucky Research Foundation, Lexington, KY (US), The University of Louisville Research Foundation, Inc., Louisville, KY (US)
Menon, Madhu; Sheetz, Michael; Sunkara, Mahendra Kumar; Pendyala, Chandrashekhar; Sunkara, Swathi; and Jasinksi, Jacek B., "Photoelectrochemical Cell Including Ga(Sbx)N1-x Semiconductor Electrode" (2017). Physics and Astronomy Faculty Patents. 14.