Photoelectrochemical Cell Including Ga(Sb_x)N_1-x Semiconductor Electrode

Authors

Madhu Menon, University of KentuckyFollow
Michael Sheetz, University of KentuckyFollow
Mahendra Kumar Sunkara
Chandrashekhar Pendyala
Swathi Sunkara
Jacek B. Jasinksi

US Patent Number

9,755,023

Publication Date

9-5-2017

Abstract

The composition of matter comprising Ga(Sb_x)N_1−x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.

Assignees

The University of Kentucky Research Foundation, Lexington, KY (US), The University of Louisville Research Foundation, Inc., Louisville, KY (US)

Application Number

13/630,875

Filing Date

09/28/2012

Recommended Citation

Menon, Madhu; Sheetz, Michael; Sunkara, Mahendra Kumar; Pendyala, Chandrashekhar; Sunkara, Swathi; and Jasinksi, Jacek B., "Photoelectrochemical Cell Including Ga(Sb_x)N_1-x Semiconductor Electrode" (2017). Physics and Astronomy Faculty Patents. 14.
https://uknowledge.uky.edu/physastron_patents/14