We have synthesized epitaxial Sr2IrO4 thin-films on various substrates and studied their electronic structure as a function of lattice-strain. Under tensile (compressive) strain, increased (decreased) Ir-O-Ir bond-angle is expected to result in increased (decreased) electronic bandwidth. However, we have observed that the two optical absorption peaks near 0.5 eV and 1.0 eV are shifted to higher (lower) energies under tensile (compressive) strain, indicating that the electronic-correlation energy is also affected by in-plane lattice-strain. The effective tuning of electronic structure under lattice-modification provides an important insight into the physics driven by the coexisting strong spin-orbit coupling and electronic correlation.

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Published in Applied Physics Letters, v. 102, article 141908, p. 1-4.

Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Applied Physics Letters, v. 102, article 141908, p. 1-4 and may be found at http://dx.doi.org/10.1063/1.4801877.

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This research was supported by the NSF through Grant No. EPS-0814194 (the Center for Advanced Materials), Grant Nos. DMR-0800367, DMR-0856234, by U.S. DoE through Grant No. DE-FG02-97ER45653, and by the Kentucky Science and Engineering Foundation with the Kentucky Science and Technology Corporation through Grant Agreement No. KSEF-148-502-12-303.

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