Organic thin-film electronics have long been considered an enticing candidate in achieving high-throughput manufacturing of low-power ubiquitous electronics. However, to achieve this goal, more work is required to reduce operating voltages and develop suitable mass-manufacture techniques. Here, we demonstrate low-voltage spray-cast organic thin-film transistors based on a semiconductor blend of 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene and poly(triarylamine). Both semiconductor and dielectric films are deposited via successive spray deposition in ambient conditions (air with 40%–60% relative humidity) without any special precautions. Despite the simplicity of the deposition method, p-channel transistors with hole mobilities of >1 cm2/Vs are realized at −4 V operation, and unipolar inverters operating at −6 V are demonstrated.

Document Type


Publication Date


Notes/Citation Information

Published in Applied Physics Letters, v. 106, no. 22, article 223304, p. 1-4.

Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Applied Physics Letters, v. 106, no. 22, article 223304, p. 1-4 and may be found at http://dx.doi.org/10.1063/1.4922194.

Digital Object Identifier (DOI)


Funding Information

S.H. and T.D.A. acknowledge the Engineering and Physical Sciences Research Council (EPSRC) Grant No. EP/G037515/1, and Plastic Logic Ltd. The work at WFU was supported by the National Science Foundation, under Grant No. ECCS-1254757.

1.eps (959 kB)
Fig. 1 High-Resolution

Figure 1.pptx (111 kB)
Fig. 1 Powerpoint

2.tif (393 kB)
Fig. 2 High-Resolution

Figure 2.pptx (100 kB)
Fig. 2 Powerpoint

3.eps (772 kB)
Fig. 3 High-Resolution

Figure 3.pptx (117 kB)
Fig. 3 Powerpoint

4.eps (586 kB)
Fig. 4 High-Resolution

Figure 4.pptx (85 kB)
Fig. 4 Powerpoint

Included in

Chemistry Commons